All-optical silicon-photonics-based LiDAR systems allow for desirable features in scanning resolution and speed, as well as leverage other advantages such as size, weight, and cost. Implementing optical circulators in silicon photonics enables bidirectional use of the light path for both transmitters and receivers, which simplifies the system configuration and thereby promises low system cost. In this work, to the best of our knowledge, we present the first experimental verification of all-passive silicon photonics conditional circulators for monostatic LiDAR systems using a nonlinear switch. The proposed silicon nonlinear interferometer is realized by controlling signal power distribution with power-splitting circuits, allowing the LiDAR transmitter and receiver to share the same optical path. Unlike the traditional concept requiring a permanent magnet, the present device is implemented by using common silicon photonic waveguides and a standard foundry-compatible fabrication process. With several additional phase shifters, the demonstrated device exhibits considerable flexibility using a single chip, which can be more attractive for integration with photodetector arrays in LiDAR systems.

Hybrid integration of III–V and ferroelectric materials is being broadly adopted to enhance functionalities in silicon photonic integrated circuits (PICs). Bonding and transfer printing have been the popular approaches for integration of III–V gain media with silicon PICs. Similar approaches are also being considered for ferroelectrics to enable larger RF modulation bandwidths, higher linearity, lower optical loss integrated optical modulators on chip. In this paper, we review existing integration strategies of III–V materials and present a route towards hybrid integration of both III–V and ferroelectrics on the same chip. We show that adiabatic transformation of the optical mode between hybrid ferroelectric and silicon sections enables efficient transfer of optical modal energies for maximum overlap of the optical mode with the ferroelectric media, similar to approaches adopted to maximize optical overlap with the gain section, thereby reducing lasing thresholds for hybrid III–V integration with silicon PICs. Preliminary designs are presented to enable a foundry compatible hybrid integration route of diverse functionalities on silicon PICs.

Silicon has been the material of choice of the photonics industry over the last decade due to its easy integration with silicon electronics, high index contrast, small footprint, and low cost, as well as its optical transparency in the near-infrared and parts of mid-infrared (MIR) wavelengths (from 1.1 to 8 μm). While considerations of micro- and nano-fabrication-induced device parameter deviations and a higher-than-desirable propagation loss still serve as a bottleneck in many on-chip data communication applications, applications as sensors do not require similar stringent controls. Photonic devices on chips are increasingly being demonstrated for chemical and biological sensing with performance metrics rivaling benchtop instruments and thus promising the potential of portable, handheld, and wearable monitoring of various chemical and biological analytes. In this paper, we review recent advances in MIR silicon photonics research. We discuss the pros and cons of various platforms, the fabrication procedures for building such platforms, and the benchmarks demonstrated so far, together with their applications. Novel device architectures and improved fabrication techniques have paved a viable way for realizing low-cost, high-density, multi-function integrated devices in the MIR. These advances are expected to benefit several application domains in the years to come, including communication networks, sensing, and nonlinear systems.